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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si1407DL_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 91.3192 25.5885 33.6673 67.4997 Ambient 8.8618 1.8454 1.3132 10.7239 Case Case Foot 32.0269 9.7478 24.5305 63.4876 Foot 617.6915 134.9667 81.5496 2.1717
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74971 Revision 12-Mar-07
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Si1407DL_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 12.4239 75.7041 97.2938 32.4188 Ambient 597.4946 2.0371 4.4563 1.2436
Case Case
Foot 16.6303 42.8883 47.0292 22.9506 Foot 106.1169 468.2106 1.6296 71.8673
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74971 Revision 12-Mar-07
Si1407DL_RC
Document Number: 74971 Revision 12-Mar-07
www.vishay.com

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