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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si6924AEDQ_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 10.7568 38.6781 34.7951 40.7699 Ambient 1.3053 38.5832 24.6875 1.6892 Case Case Foot 3.0651 43.8693 11.3230 11.7426 Foot 263.8942 29.7486 79.1707 4.8454
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74830 Revision: 10-Jul-07
www.vishay.com
Si6924AEDQ_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 13.9187 40.4017 31.8717 38.8080 Ambient 1.3348 13.2984 10.7206 1.8651
Case Case
Foot 4.2361 18.1356 19.8866 27.7418 Foot 283.8979 4.4710 18.4202 6.8324
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74830 Revision: 10-Jul-07
Si6924AEDQ_RC
Document Number: 74830 Revision: 10-Jul-07
www.vishay.com

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