Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si6923DQ_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient Mosfet 3.3258 20.4521 51.1198 40.1023 Ambient Mosfet 8.6579 8.2129 21.7911 1.6128 Ambient Schottky 6.3958 19.9968 64.0587 39.5487 Ambient Schottky 656.2024 5.6185 19.5184 621.0977 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74829 Revision: 10-Jul-07
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Si6923DQ_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient Mosfet 13.8475 38.1302 23.3424 39.6799 Ambient Mosfet 2.8515 7.0933 21.6985 1.6178
Ambient Schottky 18.2943 38.6409 40.3675 32.6973 Ambient Schottky 1.1634 8.4319 22.0518 826.6230
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74829 Revision: 10-Jul-07
Si6923DQ_RC
Document Number: 74829 Revision: 10-Jul-07
www.vishay.com
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