Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si3981DV_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 11.5878 45.4875 48.3286 49.5961 Ambient 260.7413 1.3706 11.2286 1.6583 Case Case Foot 23.4402 10.9620 19.4430 41.1548 Foot 1.5649 214.4767 58.1757 2.9908
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74814 Revision: 19-Jul-07
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Si3981DV_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 17.0836 47.3090 41.2460 49.3614 Ambient 229.5149 1.0029 9.9194 1.6273
Case Case
Foot 17.5427 43.3715 24.0470 10.0388 Foot 188.2622 968.0053 5.7792 160.3470
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74814 Revision: 19-Jul-07
Si3981DV_RC
Document Number: 74814 Revision: 19-Jul-07
www.vishay.com
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