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Power MOSFET, Transistors

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R-C Thermal Model Parameters


R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.

Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"1. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.
Note:
For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C / W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 10.0431 36.2823 40.9801 42.6945 Ambient 344.7325 u 1.6867 m 12.2042 m 1.7808 Case N / A N / A N / A N / A Case N / A N / A N / A N / A Foot 20.8198 8.7303 13.5777 36.8722 Foot 1.5906 m 256.0200 u 105.2334 m 3.7438 m
Thermal Capacitance (Joules / °C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 74813 Revision: 19-Jul-07
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Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C / W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4
Note: NA indicates not applicable
Ambient 14.1179 42.6402 31.7098 41.5321 Ambient 298.1541 u 1.1656 m 15.1240 m 1.8297
Foot 15.1088 38.3119 17.3525 9.2268 Foot 228.1893 u 1.2042 m 7.5005 m 181.0134 m
Thermal Capacitance (Joules / °C)
Reference: 1 "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number: 74813 Revision: 19-Jul-07
Vishay Siliconix
Document Number: 74813 Revision: 19-Jul-07
www.vishay.com 3