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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si3951DV_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 10.0431 36.2823 40.9801 42.6945 Ambient 344.7325 1.6867 12.2042 1.7808 Case Case Foot 20.8198 8.7303 13.5777 36.8722 Foot 1.5906 256.0200 105.2334 3.7438
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74813 Revision: 19-Jul-07
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Si3951DV_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 14.1179 42.6402 31.7098 41.5321 Ambient 298.1541 1.1656 15.1240 1.8297
Case Case
Foot 15.1088 38.3119 17.3525 9.2268 Foot 228.1893 1.2042 7.5005 181.0134
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74813 Revision: 19-Jul-07
Si3951DV_RC
Document Number: 74813 Revision: 19-Jul-07
www.vishay.com

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