Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si3433BDV_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 10.2656 32.3224 32.5441 34.8679 Ambient 1.2122 113.7516 6.9378 2.5174 Case Case Foot 7.2424 4.1194 19.2549 11.3833 Foot 5.6371 1.3087 18.4074 6.3824
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74804 Revision: 19-Jul-07
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Si3433BDV_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 15.2545 30.5275 31.0477 33.1703 Ambient 1.1505 5.9493 95.8584 2.4573
Case Case
Foot 7.3028 12.7227 8.4053 13.5692 Foot 791.9614 1.7140 2.1604 17.6127
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74804 Revision: 19-Jul-07
Si3433BDV_RC
Document Number: 74804 Revision: 19-Jul-07
www.vishay.com
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