Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4816BDY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Ambient 27.2331 33.7182 19.7521 44.2966 Ambient 18.6384 86.4392 4.4967 1.8658 Ambient 12.2821 17.9332 26.4675 43.3172 Ambient 6.0009 728.1087 40.3898 1.8351 Ambient Schottky 12.2821 17.9332 26.4675 43.3172 Ambient Schottky 6.0009 728.1087 40.3898 1.8351 Case Foot 19.1389 7.8714 14.5968 21.3929 Foot 603.2000 5.4729 13.4288 10.4951 Foot Schottky 1.1512 4.7730 15.4608 13.6150 Foot Schottky 1.4212 6.4566 14.9931 125.5608
Thermal Capacitance (Joules/°C) Junction Case Foot 35.4803 3.4294 14.4030 123.1836 Foot 937.6623 6.4944 20.6063 184.7753
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74696 Revision: 09-May-07
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Si4816BDY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Ambient 13.0449 33.5187 36.1526 42.2838 Ambient 2.2666 5.0230 53.8584 1.8671 Ambient 14.3408 26.1189 25.3722 34.1681 Ambient 4.8349 28.7434 405.2895 1.6837 Ambient Schottky 14.3408 26.1189 25.3722 34.1681 Ambient Schottky 4.8349 28.7434 405.2895 1.6837 Case Foot 16.9921 29.4619 14.2816 2.2644 Foot 4.1615 8.6232 10.8411 6.3742 Foot Schottky 4.5547 9.4277 11.9318 9.0858 Foot Schottky 1.8480 5.3767 12.1974 185.2019
Thermal Capacitance (Joules/°C) Junction Case Foot 2.8211 12.3160 124.6787 39.4136 Foot 2.2367 6.4204 20.3904 297.0285
Note: indicates applicable Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74696 Revision: 09-May-07
Si4816BDY_RC
Document Number: 74696 Revision: 09-May-07
www.vishay.com
Si4816BDY_RC
www.vishay.com
Document Number: 74696 Revision: 09-May-07
Si4816BDY_RC
Document Number: 74696 Revision: 09-May-07
www.vishay.com
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