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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si3590DV_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 31.0361 16.8933 54.9529 47.6532 Ambient 5.9498 400.0475 11.3709 1.0877 Case Case Foot 21.1640 6.2954 32.9310 29.6115 Foot 12.4886 121.7550 25.8208 1.5859
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74666 Revision: 04-May-07
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Si3590DV_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 19.7727 18.6919 63.1758 48.2182 Ambient 395.0208 2.3685 3.3103 954.6699
Case Case
Foot 12.0068 42.4284 19.8205 15.7154 Foot 193.6596 1.7025 16.6349 3.1352
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74666 Revision: 04-May-07
Si3590DV_RC
Document Number: 74666 Revision: 04-May-07
www.vishay.com

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