Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si2325DS_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 67.4652 46.0253 43.5256 8.9839 Ambient 1.3065 18.3701 2.8867 517.9326 Case Case Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74653 Revision: 04-May-07
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Si2325DS_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 18.3239 48.9932 32.1884 66.4945 Ambient 598.3429 2.5393 19.4962 1.2808
Case Case
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74653 Revision: 04-May-07
Si2325DS_RC
Document Number: 74653 Revision: 04-May-07
www.vishay.com
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