N-Channel 40-V (D-S) MOSFET RDS(on) 0.009 0.012 (A)f (Typ.)

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N-Channel 40-V (D-S) MOSFET RDS(on) 0.009 0.012 (A)f (Typ.)

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Si7848BDP
N-Channel 40-V (D-S) MOSFET
RDS(on) 0.009 0.012 (A)f (Typ.)
FEATURES
Halogen-free According 61249-2-21 Definition TrenchFET® Power MOSFET Tested Compliant RoHS directive 2002/95/EC
PowerPAK® SO-8
APPLICATIONS
6.15
5.15
DC/DC Converters Synchronous Buck Synchronous Rectifier
Bottom View Ordering Information: Si7848BDP-T1-E3 (Lead (Pb)-free) Si7848BDP-T1-GE3 (Lead (Pb)-free Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Symbol Limit 16a, 12.8a, 3.5a, 4.2a, 2.7a, Unit
Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)c,
Tstg
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, Maximum Junction-to-Case (Drain) Steady State Symbol RthJA RthJC Typical Maximum Unit °C/W
Notes: Surface Mounted board. Solder Profile (www.vishay.com/ppg?73257). PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components. Maximum under Steady State conditions °C/W. Based Document Number: 74632 S09-0532-Rev. 06-Apr-09 www.vishay.com
Si7848BDP
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic
Symbol VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) Ciss Coss Crss td(on) td(off) td(on) td(off)
Test Conditions 13.8
Min.
Typ.
Max.
Unit
0.0074 0.0095 0.009 0.012
mV/°C
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time
2000 VGEN VGEN dI/dt A/µs, 17.5 12.5
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
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Document Number: 74632 S09-0532-Rev. 06-Apr-09
Si7848BDP
TYPICAL CHARACTERISTICS unless otherwise noted
thru Drain Current Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
0.012 2400
Transfer Characteristics
2000 DS(on) On-Resistance 0.010 Capacitance (pF)
Ciss
1600
0.008 0.006
1200
Coss Crss
0.004
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current Gate Voltage
16.4 DS(on) On-Resistance 16.4
Capacitance
Gate-to-Source Voltage
(Normalized)
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
On-Resistance Junction Temperature
Document Number: 74632 S09-0532-Rev. 06-Apr-09
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Si7848BDP
TYPICAL CHARACTERISTICS unless otherwise noted
0.030 0.025 DS(on) On-Resistance Source Current
0.020 0.015
0.010 0.005
0.000
Source-to-Drain Voltage
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
GS(th) Power
On-Resistance Gate-to-Source Voltage
0.001
0.01
Time
Temperature (°C)
Threshold Voltage
Limited DS(on)*
Single Pulse Power (Junction-to-Ambient)
Drain Current Single Pulse BVDSS Limited 0.01
Drain-to-Source Voltage minimum which RDS(on) specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74632 S09-0532-Rev. 06-Apr-09
Si7848BDP
TYPICAL CHARACTERISTICS unless otherwise noted
Power Dissipation Drain Current
Case Temperature (°C)
Case Temperature (°C)
Current Derating*
Power Derating
power dissipation based TJ(max) using junction-to-case thermal resistance, more useful settling upper dissipation limit cases where additional heatsinking used. used determine current rating, when this rating falls below package limit.
Document Number: 74632 S09-0532-Rev. 06-Apr-09
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Si7848BDP
TYPICAL CHARACTERISTICS unless otherwise noted
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration
.Duty Cycle, Unit Base thJA °C/W PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data, www.vishay.com/ppg?74632.
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Document Number: 74632 S09-0532-Rev. 06-Apr-09
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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N-Channel 40-V (D-S) MOSFET RDS(on) 0.009 0.012 (A)f (Typ.)

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