Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4858DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 34.4210 5.4870 18.8020 21.2900 Ambient 1.2814 20.9559 75.0816 11.3428 Case Case Foot 4.7331 1.4307 1.5757 8.2605 Foot 24.9402 23.1289 3.5274 150.3408
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74631 Revision: 14-May-07
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Si4858DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 7.7368 18.1600 37.3247 16.7785 Ambient 15.0827 53.1334 1.0478 9.5469
Case Case
Foot 2.5741 4.3623 6.6949 2.3687 Foot 10.0830 6.7685 111.9353 834.1374
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74631 Revision: 14-May-07
Si4858DY_RC
Document Number: 74631 Revision: 14-May-07
www.vishay.com
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