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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4834BDY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 14.1288 13.5305 30.7962 51.5445 Ambient 3.1080 414.6661 26.9668 1.3647 Case Case Foot 1.8963 12.6114 9.1299 16.3624 Foot 325.4874 4.7876 32.6343 126.0560
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74624 Revision: 14-May-07
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Si4834BDY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 19.0374 33.3211 19.2621 38.3794 Ambient 3.3716 25.6313 546.4488 1.1315
Case Case
Foot 3.0573 19.0219 14.6413 3.2795 Foot 494.8409 4.3714 79.1151 379.6855
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74624 Revision: 14-May-07
Si4834BDY_RC
Document Number: 74624 Revision: 14-May-07
www.vishay.com

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