Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4562DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient N-Ch 8.3493 57.2012 34.2929 11.5647 Ambient N-Ch 8.0575 1.2098 29.0635 240.4171 Ambient P-Ch 8.3493 57.2012 34.2929 11.5647 Ambient P-Ch 8.0575 1.2098 29.0635 240.4171 Foot/Case Foot/Case
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74603 Revision: 09-May-07
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Si4562DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient N-Ch 8.5952 30.6769 17.2557 54.8803 Ambient N-Ch 4.7344 13.7556 61.7041 1.1142
Ambient P-Ch 8.5952 30.6769 17.2557 54.8803 Ambient P-Ch 4.7344 13.7556 61.7041 1.1142
Foot/Case Foot/Case
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74603 Revision: 09-May-07
Si4562DY_RC
Document Number: 74603 Revision: 09-May-07
www.vishay.com
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