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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4910DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 5.7229 29.4366 24.3709 60.0317 Ambient 842.3959 64.3556 6.9092 1.1832 Case Case Foot 14.4066 2.8075 2.9437 19.2927 Foot 70.5422 370.4615 5.4704 4.5576
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74317 Revision: 12-Jun-07
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Si4910DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 8.9669 27.9555 26.8302 55.9723 Ambient 946.1059 6.2504 71.9748 1.2187
Case Case
Foot 4.3517 20.8754 11.6210 3.3029 Foot 364.5361 2.9188 46.3456 722.6150
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74317 Revision: 12-Jun-07
Si4910DY_RC
Document Number: 74317 Revision: 12-Jun-07
www.vishay.com

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