Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4563DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 18.5848 7.4064 20.4057 73.2996 Ambient 31.4157 2.2120 150.3018 1.2225 Case Case Foot 13.0481 11.2706 9.0038 4.7028 Foot 38.5072 4.3348 256.6742 123.2009
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74313 Revision: 10-May-07
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Si4563DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 3.6346 17.6426 28.4869 69.7394 Ambient 490.1778 10.5969 62.9692 1.1937
Case Case
Foot 4.9247 16.4513 15.6115 1.0504 Foot 2.1669 5.6969 58.9766 7.4953
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74313 Revision: 10-May-07
Si4563DY_RC
Document Number: 74313 Revision: 10-May-07
www.vishay.com
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