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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4470EY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 21.9604 6.3818 13.3371 37.9264 Ambient 41.6847 8.8410 356.1870 2.0833 Case Case Foot 5.7953 923.7476 5.8236 8.4613 Foot 54.8120 1.2546 12.8310 196.0715
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74305 Revision 08-May-07
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Si4470EY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.1205 23.7400 14.9587 35.7281 Ambient 4.8970 21.5550 162.1276 1.9274
Case Case
Foot 1.6149 8.9202 7.2244 3.2532 Foot 1.9824 8.7635 68.3828 473.3334
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74305 Revision 08-May-07
Si4470EY_RC
Document Number: 74305 Revision 08-May-07
www.vishay.com

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