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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7848DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 3.3557 12.3416 14.2720 38.0038 Ambient 15.5643 113.1843 2.3700 2.0554 Case 344.9777 644.7038 594.8031 617.1018 Case 3.3123 47.6680 87.8886 94.1987 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74264 Revision: 27-Jul-07
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Si7848DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.7198 12.7658 35.6906 14.0648 Ambient 19.0924 114.9174 914.2890 4.4667
Case 124.6866 314.2777 1.1476 613.5405 Case 2.7867 174.8574 19.5345 27.7157
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74264 Revision: 27-Jul-07
Si7848DP_RC
Document Number: 74264 Revision: 27-Jul-07
www.vishay.com

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