Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7852DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 970.7997 12.3687 8.0678 43.1324 Ambient 2.8671 473.2983 41.1219 1.8042 Case 1.3946 1.1273 328.6545 342.3480 Case 61.0179 35.9873 105.5840 3.8344 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74258 Revision: 27-Jul-07
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Si7852DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 4.3418 8.9030 18.6817 32.8015 Ambient 12.3440 69.0457 439.0398 1.9299
Case 20.3899 454.8417 511.5213 815.0959 Case 3.2868 241.6136 25.2175 2.6853
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74258 Revision: 27-Jul-07
Si7852DP_RC
Document Number: 74258 Revision: 27-Jul-07
www.vishay.com
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