Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.0

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Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.0

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Si4941EDY
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
rDS(on) 0.021 0.031 (Typ)
FEATURES
TrenchFET® Power MOSFET Protection: 2500
RoHS
APPLICATIONS
Load Switch Portable Devices Battery Load Switching Notebooks
COMPLIANT
SO-8
View
Ordering Information: Si4941EDY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction Storage Temperature Range Symbol Limit Unit
8.3b, 6.6b, 1.7b, 1.3b,
Tstg
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, Maximum Junction-to-Foot (Drain) Steady State Symbol RthJA RthJF Typical Maximum 62.5 Unit °C/W
Notes: Package limited. Surface Mounted board. Maximum under Steady State conditions °C/W Document Number: 74248 S-72693-Rev. 24-Dec-07 www.vishay.com
Si4941EDY
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) VGEN 0.017 0.025 VGEN 0.83 0.021 0.031 mV/°C Symbol Test Conditions Min. Typ. Max. Unit
Drain-Source On-State Resistancea Forward Transconductancea Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage
td(on) td(off) td(on) td(off)
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
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Document Number: 74248 S-72693-Rev. 24-Dec-07
Si4941EDY
TYPICAL CHARACTERISTICS
thru Drain Current Drain Current
unless otherwise noted
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
0.040 Gate-to-Source Voltage 0.035 DS(on) On-Resistance 0.030 0.025 0.020 0.015 0.010 0.005 0.000
Transfer Characteristics
Drain Current
Total Gate Charge (nC)
On-Resistance Drain Current
DS(on) On-Resistance (Normalized) Source Current
Gate Charge
Junction Temperature (°C)
Source-to-Drain Voltage
On-Resistance Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: 74248 S-72693-Rev. 24-Dec-07
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Si4941EDY
TYPICAL CHARACTERISTICS unless otherwise noted
0.12 rDS(on) Drain-to-Source On-Resistance 0.10
0.08 VGS(th)
0.06 0.04
0.02
0.00
Gate-to-Source Voltage
Temperature (°C)
On-Resistance Gate-Source Voltage
Threshold Variance
Limited DS(on)* Drain Current P(t) P(t) P(t) Single Pulse P(t) P(t) BVDSS Limited Power
0.01 Time
Drain-to-Source Voltage minimum which rDS(on) specified
Single Pulse Power
Safe Operating Area
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Document Number: 74248 S-72693-Rev. 24-Dec-07
Si4941EDY
TYPICAL CHARACTERISTICS
Power Dissipation Package Limited Drain Current
unless otherwise noted
Case Temperature (°C)
Case Temperature (°C)
Current Derating*
Power Derating
power dissipation based TJ(max) using junction-to-case thermal resistance, more useful settling upper dissipation limit cases where additional heatsinking used. used determine current rating, when this rating falls below package limit.
Document Number: 74248 S-72693-Rev. 24-Dec-07
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Si4941EDY
TYPICAL CHARACTERISTICS unless otherwise noted
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
Duty Cycle, Unit Base RthJA °C/W
0.02 Single Pulse 0.01 Square Wave Pulse Duration
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle Normalized Effective Transient Thermal Impedance
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
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Document Number: 74248 S-72693-Rev. 24-Dec-07
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.0

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