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R-C Thermal Model Parameters

R-C values for the electrical circuit in the Foster / Tank configuration are included. The corresponding values for the Cauer / Filter configuration are available upon request.

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R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"1. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster / Tank configuration are included. The corresponding values for the Cauer / Filter configuration are available upon request.
Note:
For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C / W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 5.4825 14.0940 11.8997 18.5795 Ambient 8.6182 m 93.6547 m 6.1489 3.2294 Case N / A N / A N / A N / A Case N / A N / A N / A N / A Foot 2.7730 5.6035 12.5420 6.9783 Foot 617.0550 µ 18.1606 m 73.2626 m 9.1092 m
Thermal Capacitance (Joules / °C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number:74110 Revision 14-Nov-05
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R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C / W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4
Note: NA indicates not applicable
Ambient 4.0154 9.4382 8.0801 28.4203 Ambient 5.4161 m 37.1706 m 176.0921 m 1.9925
Foot 3.2171 13.5708 4.3045 6.7275 Foot 475.8931 µ 5.3294 m 65.4259 m 2.3240 m
Thermal Capacitance (Joules / °C)
Reference: 1 "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number:74110 Revision 14-Nov-05
Vishay Siliconix
Document Number:74110 Revision 14-Nov-05
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