Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4483DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 3.9223 20.0845 49.3160 11.5827 Ambient 8.1591 38.0911 1.7573 462.4272 Case Case Foot 703.2026 5.4515 8.8222 6.1726 Foot 1.0760 82.2998 205.9492 11.2261
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74104 Revision 01-Sep-05
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Si4483DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 6.4050 26.2942 25.9447 26.0564 Ambient 5.9246 38.7044 1.0866 1.4150
Case Case
Foot 1.3379 9.3602 6.2546 4.1140 Foot 2.0037 9.1527 93.9535 256.9737
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74104 Revision 01-Sep-05
Si4483DY_RC
Document Number: 74104 Revision 01-Sep-05
www.vishay.com
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