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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4420DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 6.1480 24.4080 26.0454 27.2274 Ambient 22.0422 56.2436 3.5677 2.3495 Case Case Foot 1.2498 5.6798 8.8708 5.1519 Foot 14.1229 109.0900 169.9025 10.7783
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74091 Revision 31-Aug-05
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Si4420DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 2.4210 16.7080 13.7271 51.0530 Ambient 2.9174 28.3980 39.1252 1.4468
Case Case
Foot 5.1298 5.7335 6.0825 4.0191 Foot 5.2863 18.7036 89.0144 46.6483
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74091 Revision 31-Aug-05
Si4420DY_RC
Document Number: 74091 Revision 31-Aug-05
www.vishay.com

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