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Power MOSFET, Transistors

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R-C Thermal Model Parameters


R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.

Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"1. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.
Note:
For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C / W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 4.6630 30.4017 26.1463 22.6225 Ambient 5.7474 m 39.7462 m 1.7481 3.4781 Case N / A N / A N / A N / A Case N / A N / A N / A N / A Foot 957.8288 m 4.6741 9.2794 6.1811 Foot 1.3107 m 112.4465 m 189.2448 m 6.4133 m
Thermal Capacitance (Joules / °C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 74087 Revision 29-Aug-05
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Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C / W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4
Note: NA indicates not applicable
Ambient 2.6371 32.4430 28.4228 20.5668 Ambient 1.0006 m 29.4484 m 885.1865 m 2.0198
Foot 4.1688 6.1387 6.3994 4.2738 Foot 2.4342 m 11.8063 m 111.2368 m 35.5996 m
Thermal Capacitance (Joules / °C)
Reference: 1 "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number: 74087 Revision 29-Aug-05
Vishay Siliconix
Document Number: 74087 Revision 29-Aug-05
www.vishay.com 3