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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4401BDY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 4.6630 30.4017 26.1463 22.6225 Ambient 5.7474 39.7462 1.7481 3.4781 Case Case Foot 957.8288 4.6741 9.2794 6.1811 Foot 1.3107 112.4465 189.2448 6.4133
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74087 Revision 29-Aug-05
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Si4401BDY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 2.6371 32.4430 28.4228 20.5668 Ambient 1.0006 29.4484 885.1865 2.0198
Case Case
Foot 4.1688 6.1387 6.3994 4.2738 Foot 2.4342 11.8063 111.2368 35.5996
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74087 Revision 29-Aug-05
Si4401BDY_RC
Document Number: 74087 Revision 29-Aug-05
www.vishay.com

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