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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4390DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 4.9368 30.1113 28.7510 26.3833 Ambient 8.1415 46.8532 2.2308 3.4489 Case Case Foot 356.4928 4.9592 8.9660 5.6680 Foot 4.3781 74.2899 245.4435 8.1421
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74086 Revision 29-Aug-05
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Si4390DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.3456 28.8277 28.7235 27.3734 Ambient 4.9331 34.7263 929.3819 1.3859
Case Case
Foot 5.4128 5.0268 5.5889 3.9583 Foot 5.4510 20.7772 102.6252 349.0890
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74086 Revision 29-Aug-05
Si4390DY_RC
Document Number: 74086 Revision 29-Aug-05
www.vishay.com

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