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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si6463BDQ_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 8.1299 32.5344 25.1850 54.1507 Ambient 4.6246 43.0454 31.0009 1.6502 Case Case Foot 3.8547 26.5144 17.6050 8.0259 Foot 4.8650 25.9783 108.9077 16.9808
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74036 Revision: 29-Jun-07
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Si6463BDQ_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 8.9573 30.3009 28.6967 52.0451 Ambient 3.0917 11.1350 17.9191 1.7371
Case Case
Foot 4.3113 15.1162 22.5419 14.0306 Foot 2.2216 5.5913 12.5639 52.9238
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74036 Revision: 29-Jun-07
Si6463BDQ_RC
Document Number: 74036 Revision: 29-Jun-07
www.vishay.com

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