Thermal Model Parameters DESCRIPTION parametric values thermal mo

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Thermal Model Parameters DESCRIPTION parametric values thermal mo

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Si6469DQ_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 14.6661 27.3371 41.1469 14.8499 Ambient 3.2360 23.5908 96.5452 3.2664 Case Case Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74034 Revision: 29-Jun-07
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Si6469DQ_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 15.8125 28.4865 39.6158 14.0852 Ambient 2.5495 10.9968 61.7303 2.7766
Case Case
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74034 Revision: 29-Jun-07
Si6469DQ_RC
Document Number: 74034 Revision: 29-Jun-07
www.vishay.com

Thermal Model Parameters DESCRIPTION parametric values thermal mo

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