N-Channel 80-V (D-S) MOSFET RDS(on) 0.017 0.021 (A)a (Typ.) 30.5

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

N-Channel 80-V (D-S) MOSFET RDS(on) 0.017 0.021 (A)a (Typ.) 30.5

Datasheet Thumbnail

Top Searches for this datasheet

Si7852ADP
N-Channel 80-V (D-S) MOSFET
RDS(on) 0.017 0.021 (A)a (Typ.) 30.5
FEATURES
Halogen-free According 61249-2-21 Available TrenchFET® Power MOSFET Tested Tested
PowerPAK SO-8
APPLICATIONS
6.15
5.15
Primary Side Switch
Bottom View
Ordering Information: Si7852ADP-T1-E3 (Lead (Pb)-free) Si7852ADP-T1-GE3 (Lead (Pb)-free Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Symbol Limit 12b, 9.7b, 4.5b, 62.5 3.2b, Unit
Continuous Drain Current
Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)d,
Tstg
THERMAL RESISTANCE RATINGS
Symbol Typical Maximum Unit RthJA Maximum Junction-to-Ambientb, °C/W RthJC Steady State Maximum Junction-to-Case (Drain) Notes: Package Limited. Surface Mounted board. Solder Profile (www.vishay.com/ppg?73461). PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components. Maximum under Steady State conditions °C/W. Document Number: 73988 S09-0223-Rev. 09-Feb-09 www.vishay.com Parameter
Si7852ADP
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic
Symbol VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) Ciss Coss Crss td(on) td(off) td(on) td(off)
Test Conditions VGS,
Min.
Typ.
Max.
Unit
0.014 0.016 0.017 0.021
mV/°C
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta
1825 30.5 VGEN 0.14 VGEN 0.77 dI/dt A/µs,
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
www.vishay.com
Document Number: 73988 S09-0223-Rev. 09-Feb-09
Si7852ADP
TYPICAL CHARACTERISTICS unless otherwise noted
thru Drain Current Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
0.022 2500
Transfer Characteristics
DS(on) On-Resistance
0.020 Capacitance (pF)
2000
Ciss
0.018 0.016 0.014
1500
1000
Crss
Coss
0.012 Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current Gate Voltage
Gate-to-Source Voltage RDS(on) On-Resistance
Capacitance
(Normalized)
Total Gate Charge (nC)
JunctionTemperature (°C)
Gate Charge Document Number: 73988 S09-0223-Rev. 09-Feb-09
On-Resistance Junction Temperature www.vishay.com
Si7852ADP
TYPICAL CHARACTERISTICS unless otherwise noted
DS(on) On-Resistance Source Current 0.08 0.10
0.06
0.04 0.02
0.01
0.001
0.00
10.0
Source-to-Drain Voltage
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
VGS(th) Variance Power
On-Resistance Gate-to-Source Voltage
0.01
Time
Temperature (°C)
Threshold Voltage
Limited RDS(on)* Drain Current
Single Pulse Power, Junction-to-Ambient
Single Pulse 0.01 0.01
Drain-to-Source Voltage minimum which RDS(on) specified
Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 73988 S09-0223-Rev. 09-Feb-09
Si7852ADP
TYPICAL CHARACTERISTICS unless otherwise noted
Drain Current
Package Limited
Case Temperature (°C)
Current Derating*
Power
Power
Case Temperature (°C)
Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
power dissipation based TJ(max) using junction-to-case thermal resistance, more useful settling upper dissipation limit cases where additional heatsinking used. used determine current rating, when this rating falls below package limit.
Document Number: 73988 S09-0223-Rev. 09-Feb-09
www.vishay.com
Si7852ADP
TYPICAL CHARACTERISTICS unless otherwise noted
Duty Cycle Normalized Effective Transient Thermal Impedance
0.05
Notes:
0.02
Duty Cycle,
Unit Base RthJA °C/W
Single Pulse 0.01
PDMZthJA(t) Surface Mounted
1000
Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle Normalized Effective Transient Thermal Impedance
0.05 0.02 Single Pulse
0.01 Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data, www.vishay.com/ppg?73988.
www.vishay.com
Document Number: 73988 S09-0223-Rev. 09-Feb-09
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com

N-Channel 80-V (D-S) MOSFET RDS(on) 0.017 0.021 (A)a (Typ.) 30.5

Top Searches for this datasheet

Other recent searches