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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si5463EDC_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 16.0860 12.6984 16.6148 54.6008 Ambient 121.6116 831.4965 11.8045 1.4599 Case Case Foot 6.2479 5.4874 3.1152 10.1495 Foot 13.1130 742.4435 244.5466 2.6459
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73979 Revision: 20-Jun-07
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Si5463EDC_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 11.7135 19.3968 16.9799 51.9097 Ambient 624.4938 7.0377 103.2634 1.4252
Case Case
Foot 5.2679 13.3387 5.0553 1.3380 Foot 414.4321 1.1607 25.9795 1.2239
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73979 Revision: 20-Jun-07
Si5463EDC_RC
Document Number: 73979 Revision: 20-Jun-07
www.vishay.com

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