Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si8441DB_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 5.5169 41.1679 27.0713 11.2439 Ambient 127.2397 2.3084 1.2574 121.9948 Case Drain 2.2335 1.5319 2.7823 2.9523 Case Drain 617.7577 65.0530 2.3875 611.1140 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73956 Revision: 21-Jun-07
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Si8441DB_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 11.0165 24.3371 11.1651 38.4813 Ambient 223.3966 1.7041 232.6334 2.2784
Case Drain 3.1611 2.4414 2.1043 1.7932 Case Drain 71.7225 257.3113 369.3748 332.9593
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73956 Revision: 21-Jun-07
Si8441DB_RC
Document Number: 73956 Revision: 21-Jun-07
www.vishay.com
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