Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7820DN_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 4.5197 7.4284 11.8825 56.6379 Ambient 6.7430 32.7582 109.4727 1.1804 Case 362.3679 504.3467 972.1139 937.1926 Case 1.9260 787.5516 18.2079 9.3126 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73841 Revision 03-Mar-06
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Si7820DN_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 7.8647 9.3907 10.7274 52.6417 Ambient 6.1206 24.0557 148.5836 1.1181
Case 1.8142 670.9463 1.0320 691.0146 Case 125.4667 695.7232 6.0783 527.9622
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73841 Revision 03-Mar-06
Si7820DN_RC
Document Number: 73841 Revision 03-Mar-06
www.vishay.com
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