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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7884DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 3.2817 11.9526 14.8374 34.6359 Ambient 21.5367 122.6730 2.7978 2.1250 Case 72.1046 927.9036 387.7305 412.3045 Case 5.3840 14.7376 46.2715 9.7722 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73756 Revision 19-Jan-06
www.vishay.com
Si7884DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 2.9560 11.2928 14.8335 35.4453 Ambient 13.8361 68.6573 518.5476 1.1877
Case 99.1476 1.3512 250.9355 100.2525 Case 346.3338 5.3726 39.3974 27.2385
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 73756 Revision 19-Jan-06
Si7884DP_RC
Document Number: 73756 Revision 19-Jan-06
www.vishay.com

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