Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si3447BDV_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 7.1986 24.9213 25.4991 52.0124 Ambient 390.3464 4.1885 33.8390 1.4069 Case Case Foot 8.5742 3.4749 9.3803 14.5718 Foot 11.3811 2.5353 219.3568 28.4424
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73753 Revision 19-Jan-06
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Si3447BDV_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 9.3331 26.7812 22.7029 50.7474 Ambient 415.8420 3.2741 29.9366 1.4147
Case Case
Foot 4.8884 12.2204 14.9583 3.9756 Foot 2.0186 4.5127 27.5978 666.2334
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73753 Revision 19-Jan-06
Si3447BDV_RC
Document Number: 73753 Revision 19-Jan-06
www.vishay.com
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