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Power MOSFET, Transistors

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R-C Thermal Model Parameters


R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.

Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"1. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.
Note:
For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C / W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 6.5652 13.7473 16.5473 56.6439 Ambient 440.5382 u 4.3223 m 68.6742 m 1.3879 Case 4.0949 m 189.8887 m 1.2620 3.5515 Case 30.1087 u 39.3612 m 377.6167 u 1.2591 m Foot N / A N / A N / A N / A Foot N / A N / A N / A N / A
Thermal Capacitance (Joules / °C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 73752 Revision 19-Jan-06
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Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C / W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4
Note: NA indicates not applicable
Ambient 8.7260 16.4069 14.1355 54.3167 Ambient 417.6865 u 5.7162 m 105.6055 m 1.3744
Case 1.9539 1.4558 962.3419 m 628.4086 m Case 293.5588 u 826.9883 u 740.2535 u 980.0675 u
Thermal Capacitance (Joules / °C)
Reference: 1 "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number: 73752 Revision 19-Jan-06
Vishay Siliconix
Document Number: 73752 Revision 19-Jan-06
www.vishay.com 3