Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7923DN_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 6.5652 13.7473 16.5473 56.6439 Ambient 440.5382 4.3223 68.6742 1.3879 Case 4.0949 189.8887 1.2620 3.5515 Case 30.1087 39.3612 377.6167 1.2591 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73752 Revision 19-Jan-06
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Si7923DN_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 8.7260 16.4069 14.1355 54.3167 Ambient 417.6865 5.7162 105.6055 1.3744
Case 1.9539 1.4558 962.3419 628.4086 Case 293.5588 826.9883 740.2535 980.0675
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73752 Revision 19-Jan-06
Si7923DN_RC
Document Number: 73752 Revision 19-Jan-06
www.vishay.com
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