Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si9407AEY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 18.2541 10.9042 3.5072 52.6116 Ambient 111.3046 27.1060 1.3344 1.4981 Case Case Foot 2.1100 7.0820 6.8889 8.9502 Foot 3.0125 46.5361 147.3208 5.2600
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73749 Revision 17-Jan-06
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Si9407AEY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 4.4215 14.6812 16.7383 49.4280 Ambient 1.6090 21.8444 91.2122 1.4926
Case Case
Foot 4.5957 9.0439 9.6950 1.7639 Foot 1.5450 3.9761 39.6644 733.7564
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73749 Revision 17-Jan-06
Si9407AEY_RC
Document Number: 73749 Revision 17-Jan-06
www.vishay.com
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