Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7358DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank configuration included. corresponding values Cauer/Filter configuration available upon request.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 970.7997 12.3687 8.0678 43.1324 Ambient 2.8671 473.2983 41.1219 1.8042 Case 16.1554 268.8099 367.6153 851.6154 Case 600.0934 5.4334 116.1618 44.7321 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73732 Revision 13-Jan-06
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Si7358DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 4.6190 9.2317 17.3169 33.5270 Ambient 12.8741 75.7954 452.9107 1.7837
Case 157.5084 278.9925 659.2732 408.6028 Case 2.4950 6.2751 27.1993 866.1249
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73732 Revision 13-Jan-06
Si7358DP_RC
Document Number: 73732 Revision 13-Jan-06
www.vishay.com
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