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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4413DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 6.1480 24.4080 26.0454 27.2274 Ambient 22.0422 56.2436 3.5677 2.3495 Case Case Foot 1.1236 4.4461 9.9726 5.3859 Foot 9.0587 129.7015 138.7031 11.4484
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73725 Revision 12-Jan-06
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Si4413DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 2.4210 16.7080 13.7271 51.0530 Ambient 2.9174 28.3980 39.1252 1.4468
Case Case
Foot 4.4484 5.1151 6.7587 4.6123 Foot 5.1263 11.2702 82.6645 16.4802
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 73725 Revision 12-Jan-06
Si4413DY_RC
Document Number: 73725 Revision 12-Jan-06
www.vishay.com

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