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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7444DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 816.9183 6.3753 8.4873 48.9947 Ambient 1.3984 49.9901 294.4438 1.3751 Case 324.4979 286.9499 251.3020 762.3926 Case 625.3748 3.0330 39.2410 11.3185 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73722 Revision 12-Jan-06
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Si7444DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 7.6597 6.7288 6.9255 43.5775 Ambient 27.3576 220.2736 30.2816 1.3100
Case 250.0066 255.7609 578.7731 214.5172 Case 1.4941 3.1793 4.4688 103.3651
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73722 Revision 12-Jan-06
Si7444DP_RC
Document Number: 73722 Revision 12-Jan-06
www.vishay.com

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