Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si1330EDL_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 220.7868 27.2959 107.0035 92.6812 Ambient 5.0802 208.2422 452.2647 1.1652 Case Case Foot 79.6144 15.9707 116.5748 124.3247 Foot 853.1305 121.8111 10.5289 3.6906
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73686 Revision 22-Dec-05
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Si1330EDL_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 17.8401 133.6206 201.3067 95.7909 Ambient 49.2264 691.2758 4.9227 583.8633
Case Case
Foot 21.3981 135.9713 84.0886 95.2982 Foot 95.6622 596.9559 2.8977 3.9614
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73686 Revision 22-Dec-05
Si1330EDL_RC
Document Number: 73686 Revision 22-Dec-05
www.vishay.com
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