Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si8411DB_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 13.3312 16.6030 8.6883 46.1721 Ambient 6.4860 1.1631 161.8455 1.2544 Case Case Foot 8.6072 1.1928 3.2165 6.9605 Foot 2.9728 736.7198 13.6910 3.4065
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73677 Revision 20-Dec-05
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Si8411DB_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 20.4833 13.1870 12.6172 38.5821 Ambient 913.9546 8.1690 404.4938 1.0914
Case Case
Foot 2.5867 7.6648 7.3328 2.4236 Foot 482.4989 958.4250 222.3754 2.0874
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73677 Revision 20-Dec-05
Si8411DB_RC
Document Number: 73677 Revision 20-Dec-05
www.vishay.com
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