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Thermal Model Parameters DESCRIPTION parametric values thermal mo
Top Searches for this datasheetSiE802DF_RC Thermal Model Parameters DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET. values electrical circuit Foster/Tank Cauer/Filter configurations included. Note: detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform. THERMAL MODEL TANK CONFIGURATION VALUES TANK CONFIGURATION Thermal Resistance (°C/W) Junction Junction Ambient 800.8191 7.3171 10.5922 49.1350 Ambient 10.0497 588.1963 47.1217 1.4789 Case Source 1.8836 225.2602 1.3129 1.1755 Case Source 49.6434 1.6560 48.9720 54.9761 Case Drain 13.9369 563.7347 258.5365 167.1992 Case Drain 347.5463 30.1854 65.7388 3.0297 Thermal Capacitance (Joules/°C) This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits. Document Number: 73659 Revision 29-Nov-05 www.vishay.com SiE802DF_RC THERMAL MODEL FILTER CONFIGURATION VALUES FILTER CONFIGURATION Thermal Resistance (°C/W) Junction Junction Note: indicates applicable Ambient 8.6804 5.8765 5.9897 47.2176 Ambient 25.1275 145.2098 17.5646 1.2744 Case Source 2.7253 244.8002 1.7199 757.7684 Case Source 441.7276 1.4085 22.4924 24.3718 Case Drain 3.2505 262.0894 498.7416 240.9187 Case Drain 236.4508 2.5538 20.2395 8.9116 Thermal Capacitance (Joules/°C) Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002 www.vishay.com Document Number: 73659 Revision 29-Nov-05 SiE802DF_RC (A)j-f.opt, SiE802DF_j-c_S_M_txt 100us V(CT1:1) 1.0ms "j-c_S_M" 10ms Time 100ms 1.0s (A)j-f.opt, SiE802DF_j-cDT_M_txt 100us V(CT1:1) 1.0ms "j-c_DT" 10ms Time 100ms 1.0s (B)j-f.opt, SiE802DF_j-c_S_M_txt (A)j-f.opt, SiE802DF_j-cDT_M_txt 100us V(CF1:1) 1.0ms "j-c_S_M" 10ms Time 100ms 1.0s 100us V(CF1:1) 1.0ms "j-c_DT" 10ms Time 100ms 1.0s Document Number: 73659 Revision 29-Nov-05 www.vishay.com Other recent searchesuPD78014H - uPD78014H uPD78014H Datasheet uPD78011H - uPD78011H uPD78011H Datasheet uPD78012H - uPD78012H uPD78012H Datasheet uPD78013H - uPD78013H uPD78013H Datasheet uPD78P018F - uPD78P018F uPD78P018F Datasheet SPT5240 - SPT5240 SPT5240 Datasheet SM1608 - SM1608 SM1608 Datasheet SC862910 - SC862910 SC862910 Datasheet 1999 - 1999 1999 Datasheet 1K460000 - 1K460000 1K460000 Datasheet PT6355 - PT6355 PT6355 Datasheet PT6355 - PT6355 PT6355 Datasheet NSPR510DS - NSPR510DS NSPR510DS Datasheet MSM9562 - MSM9562 MSM9562 Datasheet EX23 - EX23 EX23 Datasheet ESP010 - ESP010 ESP010 Datasheet AP-155 - AP-155 AP-155 Datasheet
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