Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7450DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 970.7997 12.3687 8.0678 43.1324 Ambient 2.8671 473.2983 41.1219 1.8042 Case 1.3989 1.1273 327.8889 343.0274 Case 61.1869 35.8865 106.0525 3.8665 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73633 Revision 28-Nov-05
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Si7450DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 4.6142 9.2268 17.3077 33.4869 Ambient 12.8288 77.0607 445.1520 1.7849
Case 28.1440 483.8374 454.9174 834.5167 Case 3.9989 161.6053 26.3929 268.5269
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73633 Revision 28-Nov-05
Si7450DP_RC
Document Number: 73633 Revision 28-Nov-05
www.vishay.com
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