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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7447ADP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 1.5228 10.9230 7.0203 45.3738 Ambient 24.0081 242.8258 66.9321 1.4197 Case 15.0890 436.8110 227.7905 638.4284 Case 64.2879 15.9780 73.0702 22.3581 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73632 Revision 28-Nov-05
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Si7447ADP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 8.0289 7.7784 7.4625 41.6200 Ambient 22.5706 142.4699 3.1538 1.3823
Case 2.5406 519.0572 502.1294 280.7243 Case 3.2877 4.1344 4.2479 3.2034
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 73632 Revision 28-Nov-05
Si7447ADP_RC
Document Number: 73632 Revision 28-Nov-05
www.vishay.com

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