Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si1907DL_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 40.2063 172.9504 189.9834 56.8599 Ambient 1.8806 1.4559 6.4178 225.5489 Case Case Foot 86.4684 127.1242 117.3069 19.1005 Foot 572.6423 5.2228 2.8820m 44.2333
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73613 Revision 02-Apr-07
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Si1907DL_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 100.4385 251.2547 71.8387 36.4681 Ambient 227.0528 1.4220 19.1660 2.2469
Case Case
Foot 21.7911 136.5523 46.6131 145.0435 Foot 42.2896 391.3630 1.2817 1.4488
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 73613 Revision 02-Apr-07
Si1907DL_RC
Document Number: 73613 Revision 02-Apr-07
www.vishay.com
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