N-Channel 20-V (D-S) MOSFET RDS(on) 0.0024 0.0030 (A)a (Typ.)

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N-Channel 20-V (D-S) MOSFET RDS(on) 0.0024 0.0030 (A)a (Typ.)

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Si7866ADP
N-Channel 20-V (D-S) MOSFET
RDS(on) 0.0024 0.0030 (A)a (Typ.)
FEATURES
Halogen-free available TrenchFET® Power MOSFET RDS(on) (Qgd Optimized Tested
RoHS
COMPLIANT
PowerPAK SO-8
APPLICATIONS
6.15
5.15
Low-Side MOSFET Synchronous Buck DC/DC Converters Desktops Output Voltage Synchronous Rectifier
Bottom View
Ordering Information: Si7866ADP-T1-E3 (Lead (Pb)-free) Si7866ADP-T1-GE3 (Lead (Pb)-free Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Symbol Tstg Limit 35b, 28b, 4.9b, 5.4b, 3.4b, Unit
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy
Maximum Power Dissipation
Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)d,
THERMAL RESISTANCE RATINGS
Symbol Typical Maximum Unit RthJA Maximum Junction-to-Ambientb, °C/W RthJC Maximum Junction-to-Case (Drain) Steady State Notes: Based Surface Mounted board. Solder Profile PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components. Maximum under Steady State conditions °C/W. Document Number: 73380 S-80440-Rev. 03-Mar-08 www.vishay.com Parameter
Si7866ADP
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic
Symbol VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) Ciss Coss Crss td(on) td(off) td(on) td(off)
Test Conditions VGS,
Min.
Typ.
Max.
Unit
0.0019 0.0023 0.0024 0.0030
mV/°C
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta
5415 VGEN 1285 12.5 10.3 VGEN 0.72 di/dt A/µs,
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
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Document Number: 73380 S-80440-Rev. 03-Mar-08
Si7866ADP
TYPICAL CHARACTERISTICS unless otherwise noted
Drain Current
Drain Current
thru
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
0.0030 7000 6000 DS(on) On-Resistance 0.0027 Capacitance (pF) 5000 4000 3000 2000 0.0018 1000 0.0015 Crss
Transfer Characteristics
Ciss
0.0024
0.0021
Coss
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current Gate Voltage
DS(on) On-Resistance (Normalized)
Capacitance
Gate-to-Source Voltage
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge Document Number: 73380 S-80440-Rev. 03-Mar-08
On-Resistance Junction Temperature www.vishay.com
Si7866ADP
TYPICAL CHARACTERISTICS unless otherwise noted
DS(on) Drain-to-Source On-Resistance 0.010
Source Current
0.008
0.006
0.004
0.002
0.01 0.00 Source-to-Drain Voltage
0.000
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
VGS(th) Variance
Power
0.001
0.01
Time
Temperature (°C)
Threshold Voltage
Limited RDS(on)* Drain Current
Single Pulse Power, Junction-to-Ambient
Single Pulse 0.01 0.01
Drain-to-Source Voltage minimum which DS(on) specified
Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 73380 S-80440-Rev. 03-Mar-08
Si7866ADP
TYPICAL CHARACTERISTICS unless otherwise noted
Drain Current
Package Limited
Case Temperature (°C)
Current Derating*
Power
Power
Case Temperature (°C)
Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
power dissipation based TJ(max) using junction-to-case thermal resistance, more useful settling upper dissipation limit cases where additional heatsinking used. used determine current rating, when this rating falls below package limit.
Document Number: 73380 S-80440-Rev. 03-Mar-08
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Si7866ADP
TYPICAL CHARACTERISTICS unless otherwise noted
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration
Duty Cycle,
Unit Base thJA °C/W PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration 10-1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
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Document Number: 73380 S-80440-Rev. 03-Mar-08
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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N-Channel 20-V (D-S) MOSFET RDS(on) 0.0024 0.0030 (A)a (Typ.)

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