CHARACTERISTICS attached spice model describes typical electrical
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SPICE Device Model Si1402DH Vishay Siliconix N-Channel 20-V (D-S) MOSFET
CHARACTERISTICS
attached spice model describes typical electrical characteristics n-channel vertical DMOS. subcircuit model extracted optimized over 125°C temperature ranges under pulsed gate drive. saturated output impedance best gate bias near threshold voltage. novel gate-to-drain feedback capacitance network used model gate charge characteristics while avoiding convergence difficulties switched model. model parameter values optimized provide best measured electrical data intended exact physical interpretation device.
SUBCIRCUIT MODEL SCHEMATIC
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits. Document Number: 73356 S-50584Rev. 04-Apr-05 www.vishay.com
SPICE Device Model Si1402DH Vishay Siliconix
SPECIFICATIONS 25°C UNLESS OTHERWISE NOTED) Parameter Static
Gate Threshold Voltage On-State Drain Current
Symbol
Test Condition
Simulated Data
0.062 0.088 0.78
Measured Data
Unit
VGS(th) ID(on) rDS(on)
VGS, 1.05
0.064 0.095 0.80
Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
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Document Number: 73356 S-50584Rev. 04-Apr-05
SPICE Device Model Si1402DH Vishay Siliconix
COMPARISON MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 73356 S-50584Rev. 04-Apr-05
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Document Number: 91000 Revision: 18-Jul-08
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