N-Channel 30-V (D-S) Fast Switching MOSFET RDS(on) 0.0085 0.0105

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N-Channel 30-V (D-S) Fast Switching MOSFET RDS(on) 0.0085 0.0105

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Si7840BDP
N-Channel 30-V (D-S) Fast Switching MOSFET
RDS(on) 0.0085 0.0105 16.5 (Typ.)
FEATURES
Halogen-free According 61249-2-21 Available TrenchFET® Power MOSFET Thermal Resistance PowerPAK® Package with 1.07 Profile Tested
PowerPAK SO-8
APPLICATIONS
6.15
5.15
DC/DC Converters Optimized "High-Side" Operations
Synchronous
Rectifier
Bottom View Ordering Information: Si7840BDP-T1-E3 (Lead (Pb)-free) Si7840BDP-T1-GE3 (Lead (Pb)-free Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C)a Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)
Symbol Tstg
16.5
Steady State
Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit °C/W
Notes: Surface Mounted board. Solder Profile PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components. Document Number: 73218 S09-0272-Rev. 16-Feb-09 www.vishay.com
Si7840BDP
MOSFET SPECIFICATIONS unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Reverse Recovery Charge td(on) td(off) dI/dt A/µs VGEN 16.5
Symbol VGS(th) IGSS IDSS ID(on) RDS(on)
Test Condition VGS, 55°C 16.5 16.5
Min.
Typ.
Max. ±100
Unit
0.007 0.0084 0.75 0.0085 0.0105
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS unless otherwise noted
thru
Drain Current
Drain Current
125°C 25°C 55°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
Transfer Characteristics
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Document Number: 73218 S09-0272-Rev. 16-Feb-09
Si7840BDP
TYPICAL CHARACTERISTICS
0.012 0.011 DS(on) On-Resistance 2000 Capacitance (pF) 0.010 0.009 0.008 0.007 0.006 0.005 0.004 Crss
unless otherwise noted
2500 Ciss
1500
1000 Coss
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage 16.5 16.5
Capacitance
DS(on) On-Resistance
(Normalized)
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
0.05 0.04
On-Resistance Junction Temperature
DS(on) On-Resistance
Source Current
150°C
16.5 0.03
0.02
25°C
0.01
0.00
Source-to-Drain Voltage
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Document Number: 73218 S09-0272-Rev. 16-Feb-09
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Si7840BDP
TYPICAL CHARACTERISTICS unless otherwise noted
GS(th) Variance
Power
0.001 0.01 Time Temperature
Threshold Voltage
Single Pulse Power
Limited RDS(on)* Drain Current Single Pulse
0.01
Drain-to-Source Voltage minimum which DS(on) specified
Safe Operating Area, Junction-to-Case
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
0.02
Duty Cycle,
Unit Base thJA 58°C/W PDMZthJA(t) Surface Mounted
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73218 S09-0272-Rev. 16-Feb-09
Si7840BDP
TYPICAL CHARACTERISTICS unless otherwise noted
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data, www.vishay.com/ppg?73218.
Document Number: 73218 S09-0272-Rev. 16-Feb-09
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Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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N-Channel 30-V (D-S) Fast Switching MOSFET RDS(on) 0.0085 0.0105

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