N-Channel 20-V (D-S) MOSFET RDS(on) 0.003 0.0042 (Typ.) FEAT

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N-Channel 20-V (D-S) MOSFET RDS(on) 0.003 0.0042 (Typ.) FEAT

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Si7864ADP
N-Channel 20-V (D-S) MOSFET
RDS(on) 0.003 0.0042 (Typ.)
FEATURES
Halogen-free available TrenchFET® Power MOSFETS: Rated RDS(on) (Qgd Optimized Tested
RoHS
COMPLIANT
APPLICATIONS
PowerPAK® SO-8
Low-Side MOSFET Synchronous Buck DC/DC Converters Servers Routers
5.15
6.15
Bottom View Ordering Information: Si7864ADP-T1-E3 (Lead (Pb)-free) Si7864ADP-T1-GE3 (Lead (Pb)-free Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current °C)a Pulsed Drain Current Pulse Width) Continuous Source Current (Diode Conduction)a Avalanche Current Maximum Power Dissipationa Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)b, Symbol Tstg Steady State Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit °C/W
Notes: Surface Mounted board. Solder Profile PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components.
Document Number: 73166 S-80438-Rev. 03-Mar-08
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Si7864ADP
SPECIFICATIONS unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time
Symbol VGS(th) IGSS IDSS ID(on) RDS(on) Ciss Coss Crss td(on) td(off)
Test Conditions VGS,
Min.
Typ.
Max.
Unit
0.0023 0.0032 0.70 5330 0.003 0.0042
1240
VGEN di/dt A/µs
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS unless otherwise noted
thru
Drain Current
Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
Transfer Characteristics
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Document Number: 73166 S-80438-Rev. 03-Mar-08
Si7864ADP
TYPICAL CHARACTERISTICS
0.005
unless otherwise noted
8500
DS(on) On-Resistance
0.004 0.003 0.002 Capacitance (pF)
6800 Ciss 5100
3400
0.001
1700 Crss
Coss
0.000
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
DS(on) On-Resistance (Normalized)
Capacitance
Gate-to-Source Voltage
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
0.010
On-Resistance Junction Temperature
DS(on) On-Resistance
0.008
Source Current
0.006 0.004
0.002
Source-to-Drain Voltage
0.000
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Document Number: 73166 S-80438-Rev. 03-Mar-08
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Si7864ADP
TYPICAL CHARACTERISTICS unless otherwise noted
0.001 Power
VGS(th) Variance
0.01
Time
Temperature (°C)
Threshold Voltage
Limited RDS(on)* Drain Current
Single Pulse Power
Single Pulse
0.01 0.01
Drain-to-Source Voltage minimum which DS(on) specified
Safe Operating Area, Junction-to-Case
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
Duty Cycle, Unit Base thJA °C/W
0.02 Single Pulse 0.01 Square Wave Pulse Duration
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73166 S-80438-Rev. 03-Mar-08
Si7864ADP
TYPICAL CHARACTERISTICS unless otherwise noted
Normalized Effective Transient Thermal Impedance Duty Cycle
Single Pulse 0.05 0.02
0.01 Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
Document Number: 73166 S-80438-Rev. 03-Mar-08
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Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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N-Channel 20-V (D-S) MOSFET RDS(on) 0.003 0.0042 (Typ.) FEAT

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