N-Channel 16-V (D-S) MOSFET RDS(on) 0.003 0.0055 (Typ.) FEAT

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N-Channel 16-V (D-S) MOSFET RDS(on) 0.003 0.0055 (Typ.) FEAT

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Si7862ADP
N-Channel 16-V (D-S) MOSFET
RDS(on) 0.003 0.0055 (Typ.)
FEATURES
Halogen-free available TrenchFET® Power MOSFETS: Rated RDS(on) Gate Resistance Tested
RoHS
COMPLIANT
PowerPAK® SO-8
APPLICATIONS
Synchronous Rectification Output Voltage Synchronous Rectification
6.15
5.15
Bottom View Ordering Information: Si7862ADP-T1-E3 (Lead (Pb)-free) Si7862ADP-T1-GE3 (Lead (Pb)-free Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current °C)a Pulsed Drain Current Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)b, Symbol Tstg Steady State Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient
Symbol Steady State Steady State RthJA RthJC
Maximum Junction-to-Case (Drain)
Typical
Maximum
Unit °C/W
Notes: Surface Mounted board. Solder Profile PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components.
Document Number: 73165 S-80438-Rev. 03-Mar-08
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Si7862ADP
SPECIFICATIONS unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Ciss Coss Crss td(on) td(off) di/dt A/µs VGEN 7340 2180 11.5 12.5
Symbol VGS(th) IGSS IDSS ID(on) RDS(on)
Test Conditions VGS, 55°C
Min.
Typ.
Max. ±100
Unit
0.0024 0.0045 0.75 0.003 0.0055
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS unless otherwise noted
thru
Drain Current
Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics www.vishay.com
Transfer Characteristics Document Number: 73165 S-80438-Rev. 03-Mar-08
Si7862ADP
TYPICAL CHARACTERISTICS
0.010
unless otherwise noted
10000
DS(on) On-Resistance
0.008 Capacitance (pF)
8000
Ciss
0.006
6000
0.004 0.002
4000 Coss 2000 Crss
0.000
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
RDS(on) On-Resistance
Capacitance
Gate-to-Source Voltage
(Normalized)
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
0.015
On-Resistance Junction Temperature
Source Current
DS(on) On-Resistance
0.012
0.009
0.006 0.003
Source-to-Drain Voltage
0.000
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Document Number: 73165 S-80438-Rev. 03-Mar-08
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Si7862ADP
TYPICAL CHARACTERISTICS unless otherwise noted
GS(th) Variance Power
0.001
0.01
Time
Temperature
Threshold Voltage
Single Pulse Power
Limited RDS(on)* Drain Current
Single Pulse
0.01 0.01
Drain-to-Source Voltage minimum which DS(on) specified
Safe Operating Area Junction-to-Case
Duty Cycle
Normalized Effective Transient Thermal Impedance
Notes:
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration
Duty Cycle, Unit Base RthJA °C/W PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73165 S-80438-Rev. 03-Mar-08
Si7862ADP
TYPICAL CHARACTERISTICS unless otherwise noted
Duty Cycle
Normalized Effective Transient Thermal Impedance
Single Pulse 0.05 0.02
0.01 Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
Document Number: 73165 S-80438-Rev. 03-Mar-08
www.vishay.com
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Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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N-Channel 16-V (D-S) MOSFET RDS(on) 0.003 0.0055 (Typ.) FEAT

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