Dual N-Channel 2.5-V (G-S) Input Protected Load Switch RDS(on) 0.

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Dual N-Channel 2.5-V (G-S) Input Protected Load Switch RDS(on) 0.

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Si6926AEDQ
Dual N-Channel 2.5-V (G-S) Input Protected Load Switch
RDS(on) 0.030 0.033 0.035 (Typ.)
FEATURES
Halogen-free RDS(on) Rating: Exceeds Protection
RoHS
COMPLIANT
DESCRIPTION
Si6926AEDQ dual N-Channel MOSFET with protection gate over-voltage protection circuitry incorporated into MOSFET. device designed Lithium battery pack circuits. 2-stage input protection circuit unique design, consisting stages back-to-back zener diodes separated resistor. first stage diode designed absorb most energy. second stage diode designed protect gate from remaining energy over-voltages above gates inherent safe operating range. series resistor used limit current through second stage diode during over voltage conditions maximum value which limits input current maximum toff Si6926AEDQ been optimized battery load switch Lithium applications with advantage both RDS(on) rating safe gate-to-source maximum rating.
APPLICATION CIRCUITS
Overvoltage Protection Overvoltage Protection
typical value design. Battery Protection Circuit Typical Characteristics, Gate-Current Gate-Source Voltage, Page
Figure Typical Lithium Battery Pack
Figure Input Overvoltage Protection Circuit
Document Number: 73090 S-81056-Rev. 12-May-08
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Si6926AEDQ
FUNCTIONAL BLOCK DIAGRAM CONFIGURATION
TSSOP-8
View Ordering Information: Si6926AEDQ-T1-GE3 (Lead (Pb)-free Halogen-free)
N-Channel N-Channel
Figure
Figure
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage, Source-Drain Voltage Gate-Source Voltage Continuous Drain-to-Source Current °C)a Pulsed Drain-to-Source Current Pulsed Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range Symbol Tstg 0.83 0.64 0.69 0.83 0.53 Steady State Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: Surface Mounted board. Steady State Steady State Symbol RthJA RthJF Typical Maximum °C/W Unit
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Document Number: 73090 S-81056-Rev. 12-May-08
Si6926AEDQ
SPECIFICATIONS unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltage Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) td(off) VGEN 0.43
Symbol VGS(th) IGSS IDSS ID(on) RDS(on)
Test Conditions VGS, 0.83
Min.
Typ.
Max.
Unit
0.023 0.025 0.027 0.65 0.030 0.033 0.035
Notes: Guaranteed design, subject production testing. Pulse test; pulse width duty cycle
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS
unless otherwise noted
100.000 10.000
Gate Current (mA)
Gate Current 1.000 0.01 0.001
Gate-to-Source Voltage
Gate-to-Source Voltage
Gate-Current Gate-Source Voltage
Gate Current Gate-Source Voltage
Document Number: 73090 S-81056-Rev. 12-May-08
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Si6926AEDQ
TYPICAL CHARACTERISTICS unless otherwise noted
thru Drain Current Drain Current
1.00 1.25 1.50 1.75 2.00
0.00
0.25
0.50
0.75
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
0.05
Transfer Characteristics
RDS(on) On-Resistance
0.04 0.03
Gate-to-Source Voltage
0.02
0.01
0.00
12.0 16.0 20.0 Drain Current Total Gate Charge (nC)
On-Resistance Drain Current
DS(on) On-Resistance (Normalized) Source Current
Gate Charge
Junction Temperature (°C)
Source-to-Drain Voltage
On-Resistance Junction Temperature
Source-Drain Diode Forward Voltage
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Document Number: 73090 S-81056-Rev. 12-May-08
Si6926AEDQ
TYPICAL CHARACTERISTICS unless otherwise noted
0.08 0.07 RDS(on) On-Resistance 0.06 GS(th) Variance 0.05 0.04 0.03 0.02 0.01 0.00 Gate-to-Source Voltage
Temperature (°C)
On-Resistance Gate-to-Source Voltage
Power Drain Current Limited DS(on)
Threshold Voltage
Limited
ID(on) Limited Single Pulse BVDSS Limited Drain-to-Source Voltage minimum which DS(on) specified 0.01
10-3
10-2
10-1
Time
Single Pulse Power, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
Safe Operating Area, Junction-to-Case
Notes:
0.05
0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration
Duty Cycle,
Unit Base thJA °C/W PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 73090 S-81056-Rev. 12-May-08
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Si6926AEDQ
TYPICAL CHARACTERISTICS unless otherwise noted
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
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Document Number: 73090 S-81056-Rev. 12-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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Dual N-Channel 2.5-V (G-S) Input Protected Load Switch RDS(on) 0.

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