Dual N-Channel 2.5-V (G-S) MOSFET RDS(on) 0.030 0.033 0.035 0.043

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Dual N-Channel 2.5-V (G-S) MOSFET RDS(on) 0.030 0.033 0.035 0.043

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Si6926ADQ
Dual N-Channel 2.5-V (G-S) MOSFET
RDS(on) 0.030 0.033 0.035 0.043
FEATURES
Halogen-free
RoHS
COMPLIANT
TSSOP-8
View Ordering Information: Si6926ADQ-T1-GE3 (Lead (Pb)-free Halogen-free) N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current °C)a Pulsed Drain Current Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range Symbol Tstg 0.83 0.64 0.69 0.83 0.53 Steady State Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: Surface Mounted board, SPICE model information Worldwide Web: containing terminations RoHS compliant, exemptions apply. Document Number: 72754 S-81056-Rev. 12-May-08 www.vishay.com Steady State Steady State Symbol RthJA RthJF Typical Maximum °C/W Unit
Si6926ADQ
SPECIFICATIONS unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb VGS(th) IGSS IDSS ID(on) VGS, Drain-Source On-State Resistanceb RDS(on) Forward Transconductance Diode Forward Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) 0.83 dI/dt A/µs VGEN 10.5 Voltageb
Symbol
Test Conditions
Min. 0.40
Typ.a
Max.
Unit
0.024 0.026 0.029 0.035 0.030 0.033 0.035 0.043
0.83
Notes: Guaranteed design, subject production testing. Pulse test; pulse width duty cycle
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS unless otherwise noted
thru
Drain Current
Drain Current
1.00 1.25 1.50 1.75 2.00
0.00
0.25
0.50
0.75
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics www.vishay.com
Transfer Characteristics Document Number: 72754 S-81056-Rev. 12-May-08
Si6926ADQ
TYPICAL CHARACTERISTICS unless otherwise noted
0.05 1200
RDS(on) On-Resistance
0.04 0.03 Capacitance (pF)
1000
Ciss
0.02
Coss Crss
0.01
0.00
12.0 16.0 20.0
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage DS(on) On-Resistance (Normalized)
Capacitance
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
0.08 0.07 RDS(on) On-Resistance 0.06
On-Resistance Junction Temperature
Source Current
0.05 0.04 0.03 0.02 0.01 0.00
Source-to-Drain Voltage
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Document Number: 72754 S-81056-Rev. 12-May-08
www.vishay.com
Si6926ADQ
TYPICAL CHARACTERISTICS unless otherwise noted
Power
GS(th) Variance
10-3
10-2
10-1
Time
Temperature (°C)
Threshold Voltage
Limited RDS(on) Drain Current
Single Pulse Power Junction-to-Ambient
Limited
ID(on) Limited Single Pulse BVDSS Limited Drain-to-Source Voltage minimum which RDS(on) specified 0.01
Safe Operating Area, Junction-to-Case
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration
Duty Cycle,
Unit Base thJA °C/W PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72754 S-81056-Rev. 12-May-08
Si6926ADQ
TYPICAL CHARACTERISTICS unless otherwise noted
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
Document Number: 72754 S-81056-Rev. 12-May-08
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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Dual N-Channel 2.5-V (G-S) MOSFET RDS(on) 0.030 0.033 0.035 0.043

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